052-6418 rev a 10-2013 ap70gr65b2scd30 symbol parameter ratings unit v ces collector emitter voltage 650 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 134 a i c2 continuous collector current @ t c = 110c 65 i cm pulsed collector current 1 260 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 595 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics APT70GR65B2SCD30 650v, 70a, v ce(on) = 1.9v typical microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 250ua) 650 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 1.0ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 70a, t j = 25c) 1.9 2.4 collector-emitter on voltage (v ge = 15v, i c = 70a, t j = 125c) 2.4 collector-emitter on voltage (v ge = 15v, i c = 140a, t j = 25c) 2.6 i ces collector cut-off current (v ce = 650v, v ge = 0v, t j = 25c) 2 40 850 a collector cut-off current (v ce = 650v, v ge = 0v, t j = 125c) 2 500 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? features ? low saturation voltage ? low tail current ? rohs compliant ? short circuit withstand rated ? high frequency switching ? low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). the ultra fast 650v npt-igbt ? family of products is the newest generation of igbts optimized for outstanding ruggedness and best trade-off between conduction and switching losses. combi (igbt and diode) to-247 downloaded from: http:///
APT70GR65B2SCD30 052-6418 rev a 10-2013 thermal and mechanical characteristics dynamic characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance .21 c/w r ja junction to ambient thermal resistance 40 w t package weight .22 oz 6.2 g 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speciications and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 4250 pf c oes output capacitance 847 c res reverse transfer capacitance 415 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 325v i c = 70a 7.0 v q g 3 total gate charge 226 305 nc q ge gate-emitter charge 26 35 q gc gate- collector charge 104 140 t d(on) turn-on delay time inductive switching (25c) v cc = 433v v ge = 15v i c = 70a r g = 4.3 4 t j = +25c 19 ns t r current rise time 45 t d(off) turn-off delay time 170 t f current fall time 67 e on2 5 turn-on switching energy 1790 2685 j e off 6 turn-off switching energy 1460 1970 t d(on) turn-on delay time inductive switching (125c) v cc = 433v v ge = 15v i c = 70a r g = 4.3 4 t j = +125c 19 ns t r current rise time 45 t d(off) turn-off delay time 190 t f current fall time 74 e on2 5 turn-on switching energy 1760 2640 j e off 6 turn-off switching energy 1720 2580 0 0.05 0.10 0.15 0.20 0.25 10 -4 10 -3 10 -2 0.1 1 10 -5 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : downloaded from: http:///
052-6418 rev a 10-2013 ap70gr65b2scd30 typical performance curves 0 20 40 60 80 100 120 140 160 180 50 25 0 25 50 75 100 125 150 0 1 2 3 4 -50 -25 0 25 50 75 100 125 1 2 3 4 8 10 12 14 16 18 0 50 100 150 0 2 4 6 8 10 12 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 0 1 2 3 4 250s pulse test<0.5 % duty cycle t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 35a i c = 70a i c = 140a i c = 70a i c = 140a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 6.5v 7v i c = 35a 8.0v 8.5v 7.5v 9v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 frequency (khz) t j , junction temperature figure 8, breakdown voltage vs junction temperature bv ces , breakdown voltage (normalized) downloaded from: http:///
APT70GR65B2SCD30 052-6418 rev a 10-2013 typical performance curves 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 i c = 70a t j = 25c v ce = 520 v ce = 325v v ce = 130v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 0 50 100 150 200 250 0 20 40 60 80 100 120 140 0 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 6000 0 10 20 30 40 50 0 1000 2000 3000 4000 5000 6000 0 20 40 60 80 100 120 140 v ce = 433v, v ge =15v, r g = 4.3? t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance () figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss (j) t j , junction temperature (c) figure 16, swiitching energy vs junction temperature switching energy losses (j) t r t d(off) t f v ce = 433v, v ge =15v, r g = 4.3? t j = 25c t j = 125c v ce = 433v, v ge =15v, r g = 4.3? t j = 25c t j = 125c e on2 e off e on2 e off v ce = 433v, v ge =15v, i c = 70a t j = 125c switching energy loss (j) e off e on2 v ce = 433v, v ge =15v, r g = 4.3? i c = 70a 1.0e?11 1.0e?10 1.0e?9 1.0e?8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 1000 1 10 100 1000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) 1ms 100us 10ms 100ms 10us downloaded from: http:///
052-6418 rev a 10-2013 ap70gr65b2scd30 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speciied. zero recovery low leakage sic anti-parallel diode 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -4 10 -3 10 -2 0.1 1 10 -5 rectangular pulse duration (seconds) figure 18. maximum effective transient thermal impedance, junction-to-case vs. pulse duration z jc , thermal impedance (c/w) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : symbol characteristic / test conditions ratings unit i f maximum d.c. forward current t c = 25c 46 amps t c = 85c 30 i fsm non-repetitive forward surge current (t j = 25c, t p = 10ms, half sine) 247 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 30a t j = 25c 1.5 volts i f = 30a, t j = 150c 1.9 q c total capactive charge v r = 325v, i f = 30a, di/dt = -500a/s, t j = 25c 150 nc c t junction capacitance v r = 1v, t j = 25c, f = 1mhz 945 pf junction capacitance v r = 200v, t j = 25c, f = 1mhz 138 junction capacitance v r = 400v, t j = 25c, f = 1mhz 105 static electrical characteristics 0 10 20 30 40 50 60 0 1 2 3 4 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 v f , anode-to-cathode voltage (v) figure 19, forward current vs. forward voltage i f , forward current (a) case temperature (c) figure 20, maximum forward current vs. case temperature t j = -55 c t j = 25 c t j = 125 c t j = 150 c i f (peak) (a) downloaded from: http:///
APT70GR65B2SCD30 052-6418 rev a 10-2013 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 case temperature (c) figure 21. maximum power dissipation vs. case temperature p total (w) 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 v r , reverse voltage (v) figure 22. reverse recovery charge vs. v r q rr , reverse recovery charge (nc) v r , reverse voltage (v) figure 23. junction capacitance vs. reverse voltage c j , junction capacitance (pf) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) these dimensions are equal to the to-247 without the mounting hole. 2-plcs. dimensions in millimeters and (inches) t-max ? (b2) package outline 1.016(.040) collector (cathode) gate emitter (anode) collector (cathode) downloaded from: http:///
052-6418 rev a 10-2013 ap70gr65b2scd30 typical performance curves the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by mi crosemi in writing signed by an oficer of microsemi. microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any u ser or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by micro semi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. mi- crosemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp downloaded from: http:///
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